Yufeng Dong
Patent Engineer
612-455-3808
ydong@hsml.com

Education
Chongqing University, China
    B.S., Physics, 1998
Chongqing University, China
    M.S., Solid State Physics, 2001
National University of Singapore
    Ph.D., Solid State Physics, 2006

Practice Areas
Dr. Dong assists the firm's attorneys in domestic and international patent prosecution matters, assists with various IP issues related to China and assists in doing translations from Chinese to English. Dr. Dong practices in a variety of technologies including electrical, electro-/bio-mechanical, semiconductors, nanoelectronics, materials science, computer engineering, optics, renewable energy and solar cells.

Relevant Experience
Eleven years of research experience in the areas of semiconductor materials and devices, computational materials science, biochemical sensors, as well as micro-electro-mechanical systems. Mr. Dong has over twenty peer-reviewed publications and is a regular reviewer for many academic journals.

Papers & Presentations
• Y. F. Dong, Z.-Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. B. Brillson, “Zn- and O-face
   polarity effects at ZnO surfaces and metal interfaces,” Appl. Phys. Lett. 93. 072111(2008).

• Y. F. Dong and L. J. Brillson, “First-principles study of metal (111)/ZnO {0001} interfaces,” J. Electron.
   Mater. 37, 743 (2008).

• Y. F. Dong, S. J. Wang, Y. P. Feng and A. C. H. Huan, “Chemical tuning of hand alignments for metal
   gate/high-k oxide interfaces,” Phys. Rev. B 73, 045302 (2006).

• Y. F. Dong, S. J. Wang, J. W. Chai, Y. P. Feng and A. C. H. Huan. “Impact of interface structure on
   Schottky-barrier height for Ni/ZrO₂(001) interfaces,” Appl. Phys. Lett. 86, 132103 (2005).

• Y. F. Dong, W. L. Wang, and K. J. Liao, “Ethanol-sensing characteristics of pure and Pt-activated
   CdIn₂O₄ films prepared by r. f. reactive sputtering,” Sens. Actuators B 67, 254 (2000).

Languages
Mandarin