Yufeng Dong

Patent Engineer
Patent Agent

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Telephone
612.455.3808

Fax
612.455.3801

E-mail
ydong@hsml.com

Support Staff
Maria Zamorano
612.455.3830

Technology Areas

Electrical
Electro-/Bio-Mechanical
Semiconductors
Nanoelectronics
Materials Science
Computer Engineering
Optics
Renewable Energy
Solar cells.

Dr. Dong assists the firm's attorneys in domestic and international patent prosecution matters, assists with various IP issues related to China and assists in doing translations from Chinese to English.

Education

Chongqing University, China
    B.S., Physics, 1998
Chongqing University, China
    M.S., Solid State Physics, 2001
National University of Singapore
   Ph.D., Solid State Physics, 2006

Experience

Eleven years of research experience in the areas of semiconductor materials and devices, computational materials science, biochemical sensors, as well as micro-electro-mechanical systems. Dr. Dong has over twenty peer-reviewed publications and is a regular reviewer for many academic journals.

Languange Skills

Mandarin

Presentations

  • Y. F. Dong, Z.-Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. B. Brillson, “Zn- and O-face
       polarity effects at ZnO surfaces and metal interfaces,” Appl. Phys. Lett. 93. 072111(2008).
  • Y. F. Dong and L. J. Brillson, “First-principles study of metal (111)/ZnO {0001} interfaces,” J. Electron.
       Mater.
    37, 743 (2008).
  • Y. F. Dong, S. J. Wang, Y. P. Feng and A. C. H. Huan, “Chemical tuning of hand alignments for metal
       gate/high-k oxide interfaces,” Phys. Rev. B 73, 045302 (2006).
  • Y. F. Dong, S. J. Wang, J. W. Chai, Y. P. Feng and A. C. H. Huan. “Impact of interface structure on Schottky-barrier height for Ni/ZrO2(001) interfaces,” Appl. Phys. Lett. 86, 132103 (2005).
  • Y. F. Dong, W. L. Wang, and K. J. Liao, “Ethanol-sensing characteristics of pure and Pt-activated CdIn2O4 films prepared by r. f. reactive sputtering,” Sens. Actuators B 67, 254 (2000).